Jordan Nichols

Jordan Nichols serves as a Senior Device Integration Engineer, specializing in the development and integration of LED technologies. Nichols has played a pivotal role in expanding the company’s production capabilities through a purpose-built epitaxy facility designed to meet increasing demand. His technical expertise is evident in his method of constructing LEDs, starting with a 400 nm-thick AlN buffer and adding multiple superlattices followed by a p-type GaN layer to form the LED’s epistructure. He employs a short-period superlattice in the active region to boost transverse electric emission, which enhances light extraction efficiency. Additionally, Nichols has innovated by inserting a chirp superlattice that improves hole injection and serves as an electron-blocking layer, further optimizing the LED’s performance. His manufacturing process involves standard photolithography and metallization to produce LEDs from epiwafers. Nichols has also contributed to the academic field with a publication in Applied Physics Letters and has developed a method for packaging LEDs by dicing, thinning, and flip-chip bonding the die to an AlN ceramic package. His rigorous testing of these devices has demonstrated a significant lifetime of 2,800 hours, marking a notable achievement in LED durability.